W25Q64JVSIQ 3V 64Mbit Serial Flash Memory Chip

Description

W25Q64JVSIQ 3V 64Mbit Serial Flash Memory Chip

The W25Q64JV (64M-bit) Serial Flash memory provides a storage solution for systems with limited space,
pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash devices.
They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP) and storing
voice, text and data. The device operates on 2.7V to 3.6V power supply with current consumption as low as
1µA for power-down. All devices are offered in space-saving packages.

The W25Q64JV array is organized into 32,768 programmable pages of 256-bytes each. Up to 256 bytes can
be programmed at a time. Pages can be erased in groups of 16 (4KB sector erase), groups of 128 (32KB
block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The W25Q64JV has 2,048
erasable sectors and 128 erasable blocks respectively. The small 4KB sectors allow for greater flexibility in
applications that require data and parameter storage. (See Figure 2.)

The W25Q64JV supports the standard Serial Peripheral Interface (SPI), Dual/Quad I/O SPI: Serial Clock, Chip
Select, Serial Data I/O0 (DI), I/O1 (DO), I/O2 and I/O3. SPI clock frequencies of W25Q64JV of up to 133MHz
are supported allowing equivalent clock rates of 266MHz (133MHz x 2) for Dual I/O and 532MHz (133MHz x
4) for Quad I/O when using the Fast Read Dual/Quad I/O. These transfer rates can outperform standard
Asynchronous 8 and 16-bit Parallel Flash memories.

Additionally, the device supports JEDEC standard manufacturer and device ID, and a 64-bit Unique Serial

Number and three 256-bytes Security Registers.

FEATURES

 New Family of SpiFlash Memories
– W25Q64JV: 64M-bit / 8M-byte
– Standard SPI: CLK, /CS, DI, DO
– Dual SPI: CLK, /CS, IO0, IO1
– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
– Software & Hardware Reset(1)
 Highest Performance Serial Flash
– 133MHz Single, Dual/Quad SPI clocks
266/532MHz equivalent Dual/Quad SPI
– Min. 100K Program-Erase cycles per sector
– More than 20-year data retention
 Efficient “Continuous Read”
– Continuous Read with 8/16/32/64-Byte Wrap
– As few as 8 clocks to address memory
– Allows true XIP (execute in place) operation
– Outperforms X16 Parallel Flash
 Low Power, Wide Temperature Range
– Single 2.7 to 3.6V supply
– <1µA Power-down (typ.)
– -40°C to +85°C operating range
 Flexible Architecture with 4KB sectors
– Uniform Sector/Block Erase (4K/32K/64K-Byte)
– Program 1 to 256 byte per programmable page
– Erase/Program Suspend & Resume
 Advanced Security Features
– Software and Hardware Write-Protect
– Special OTP protection
– Top/Bottom, Complement array protection
– Individual Block/Sector array protection
– 64-Bit Unique ID for each device
– Discoverable Parameters (SFDP) Register
– 3X256-Bytes Security Registers
– Volatile & Non-volatile Status Register Bits
 Space Efficient Packaging
– 8-pin SOIC 208-mil
– 8-pad WSON 6×5-mm/8×6-mm
– 16-pin SOIC 300-mil
– 24-ball TFBGA 8×6-mm (6×4 ball array)
– 24-ball TFBGA 8×6-mm (6×4/5×5 ball array)
– Contact Winbond for KGD and other options