2SD1963 NPN Transistors(BJT) 50V 3A SMD

Description:
Collector-Base Voltage(VCBO): 50V
Collector-Emitter Voltage(VCEO): 20V
Collector Current(IC):3A
Transtion Frequency(fT): 150MHz
DC Current Gain(hFE): 180~390
Collector-Emitter Saturation Voltage: 250mV/0.25V
Power Dissipation: 500mW/0.5W
Description & Applications: Power Transistor (-50V, -3A) featrues low saturation voltage excellent DC current gain characteristics